bss159n sipmos ? small-signal-transistor features ? n-channel ? depletion mode ? d v /d t rated ? available with v gs(th) indicator on reel ? pb-free lead-plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c 0.23 a t a =70 c 0.18 pulsed drain current i d,pulse t a =25 c 0.92 reverse diode d v /d t d v /d t i d =0.23 a, v ds =60 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per mil-std 883 class 0 power dissipation p tot t a =25 c 0.36 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 1) see table on next page and diagram 11 value v ds 60 v r ds(on),max 8 ? i dss,min 0.13 a product summary sot-23 type package pb-free tape and reel information marking bss159 pg-sot-23 yes l6327: 3000 pcs/reel sgs bss159 pg-sot-23 yes l6906: 3000 pcs/reel sorted in v gs ( th ) bands 1) sgs rev. 1.32 page 1 2006-12-11
bss159n parameter symbol conditions unit min. typ. max. thermal characteristics thermal characteristics r thja minimal footprint - - 350 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =-10 v, i d =250 a 60 - - v gate threshold voltage v gs(th) v ds =3 v, i d =26 a -3.5 -2.8 -2.4 drain-source cutoff current i d(off) v ds =60 v, v gs =-10 v, t j =25 c - - 0.1 a v ds =60 v, v gs =-10 v, t j =125 c --10 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 10 na on-state drain current i dss v gs =0 v, v ds =10 v 130 - - ma drain-source on-state resistance r ds(on) v gs =0 v, i d =0.07 a - 3.9 8 ? v gs =10 v, i d =0.16 a - 1.7 3.5 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =0.16 a 0.1 0.19 - s threshold voltage v gs(th) sorted in bands 2) j v gs(th) v ds =3 v, i d =26 a -2.6 - -2.4 v k -2.75 - -2.55 l -2.9 - -2.7 m -3.05 - -2.85 n -3.2 - -3 2) each reel contains transistors out of one band whose identifying letter is printed on the reel label. a specific band cannot be ordered separately. values rev. 1.32 page 2 2006-12-11
bss159n parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss -3344pf dynamic characteristics c oss - 8.3 11 reverse transfer capacitance c rss - 3.9 5.9 turn-on delay time t d(on) - 3.1 4.7 ns rise time t r - 2.9 4.4 turn-off delay time t d(off) -913 fall time t f -913 gate charge characteristics gate to source charge q gs - 0.14 0.21 nc gate to drain charge q gd - 0.7 1.1 gate charge total q g - 2.2 2.9 gate plateau voltage v plateau - -0.14 - v reverse diode diode continous forward current i s - - 0.20 a diode pulse current i s,pulse - - 0.81 diode forward voltage v sd v gs =-3 v, i f =0.16 a, t j =25 c - 0.79 1.2 v reverse recovery time t rr - 10.4 13 ns reverse recovery charge q rr - 3.3 4.1 nc v r =30 v, i f =0.16 a, d i f /d t =100 a/s t a =25 c values v gs =-10 v, v ds =25 v, f =1 mhz v dd =25 v, v gs =-3?7 v, i d =0.16 a, r g =6 ? v dd =40 v, i d =0.16 a, v gs =-3 to 5 v rev. 1.32 page 3 2006-12-11
bss159n 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c; d =0 z thja =f( t p ) parameter: d = t p / t 100 ms 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 1 10 0 10 -1 10 -2 10 -3 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 3 10 2 10 1 10 0 t p [s] z thja [k/w] 0 0.1 0.2 0.3 0.4 0 40 80 120 160 t a [c] p tot [w] 0 0.04 0.08 0.12 0.16 0.2 0.24 0 40 80 120 160 t a [c] i d [a] rev. 1.32 page 4 2006-12-11
bss159n 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c 0 0.1 0.2 0.3 0.4 0.5 0.6 -4 -3 -2 -1 0 1 v gs [v] i d [a] 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00 0.10 0.20 0.30 i d [a] g fs [s] -0.2 v -0.1 v 0 v 0.1 v 0.2 v 0.5 v 1 v 10 v 0 0.1 0.2 0.3 0.4 0.5 0.6 0246810 v ds [v] i d [a] -0.2 v -0.1 v 0 v 0.1 v 0.2 v 0.5 v 1 v 10 v 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 i d [a] r ds(on) [ ? ] rev. 1.32 page 5 2006-12-11
bss159n 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =0.07 a; v gs =0 v v gs(th) =f( t j ); v ds =3 v; i d =26 a parameter: i d 11 threshold voltage bands 12 typ. capacitances i d =f( v gs ); v ds =3 v; t j =25 c c =f( v ds ); v gs =-10 v; f =1 mhz 26 a j k l m n 0.001 0.01 0.1 1 -3.5 -3 -2.5 -2 v gs [v] i d [ma] typ 98 % 0 4 8 12 16 20 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ? ] typ 98 % 2 % -4 -3.6 -3.2 -2.8 -2.4 -2 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 2 10 1 10 0 010203040 v ds [v] c [pf] rev. 1.32 page 6 2006-12-11
bss159n 13 forward characteristics of reverse diode 15 typ. gate charge i f =f( v sd ) v gs =f( q gate ); i d =0.16 a pulsed parameter: t j parameter: v dd 16 drain-source breakdown voltage v br(dss) =f( t j ); i d =250 a 50 70 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0.2 vds(max) 0.5 vds(max) 0.8 vds(max) -4 -3 -2 -1 0 1 2 3 4 5 6 012 q gate [nc] v gs [v] 25 c 150 c 25 c, 98% 150 c, 98% 0.001 0.01 0.1 1 0 0.4 0.8 1.2 v sd [v] i f [a] rev. 1.32 page 7 2006-12-11
bss159n package outline: footprint: packaging: dimensions in mm rev. 1.32 page 8 2006-12-11
bss159n published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions o characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical value s stated herein and/or any information regarding the application of the device, infineon technologies hereb y disclaims any and all warranties and liabilities of any kind, i ncluding without limitation warranties o non-infringement of intellectual property rights of any third p arty information for further information on technology, delivery terms and condi tions and prices please contact your neares infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types i n question please contact your nearest infineon technologies offi ce . infineon technologies components may only be used in life-suppo rt devices or systems with the express writte n approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failur e of that life-support device or system, or to affect the safety or effectiveness of that device or system. life suppor t devices or systems are intended to be implanted in the human bo dy, or to support and/or maintain and sustai n and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons ma y be endangered. rev. 1.32 page 9 2006-12-11
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